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2SB1187 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1187 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1187 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50μA , IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA , IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-60V ;IE=0 -10 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA hFE DC current gain IC=-0.5A ; VCE=-5V 60 320 fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz Cob Output capacitance IE=0 ; VCB=-10V ,f=1MHz 100 pF |
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