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2SB1223 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1223 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1223 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -70 V V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -60 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA -1.0 -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ; IB=-4mA -2.0 V ICBO Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-2V 2000 5000 fT Transition frequency IC=-2A ; VCE=-5V 20 MHz Switching times ton Turn-on time 0.5 μs tstg Storage time 1.4 μs tf Fall time IC=500IB1=-500IB2=-2A VCC=-20V ,RL=10Ω 1.2 μs |
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