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2SB1225 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1225 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -10 A ICM Collector current-peak -15 A TC=25℃ 30 PC Collector dissipation 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol |
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