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2SB1370 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1370 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1370 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 B -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.5 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -10 μA hFE DC Current Gain IC= -0.5A; VCE= -5V 100 320 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 80 pF fT Current-Gain—Bandwidth Product IC=-0.5A; VCE= -5V; ftest= 5MHz 15 MHz hFE Classifications E F 100-200 160-320 isc Website:www.iscsemi.cn 2 |
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