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2SB1402 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1402 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1402 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA B -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A; IB= -30mA B -3.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -10 μA hFE DC Current Gain IC= -1.5A; VCE= -3V 1000 20000 VECF C-E Diode Forward Voltage IF= 3A 3.0 V isc Website:www.iscsemi.cn 2 |
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