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2SB1430 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1430 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1430 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -2mA B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -2mA B -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -1.0 μA hFE-1 DC Current Gain IC= -2A; VCE= -2V 2000 20000 hFE-2 DC Current Gain IC= -4A; VCE= -2V 500 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 80 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 60 pF Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 1.0 μs tf Fall Time IC= -2A, IB1= -IB2= -2mA, VCC≈ -50V; RL= 25Ω 1.0 μs hFE-1 Classifications M L K 2000-5000 4000-10000 8000-20000 isc Website:www.iscsemi.cn 2 |
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