3LP01C

No.6645-1/4

Features

•

Low ON-resistance.

•

High-speed switching.

•

2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--30

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

--0.1

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--0.4

A

Allowable Power Dissipation

PD

0.25

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--30V, VGS=0V

--1

μA

Gate-to-Sourse Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--100μA

--0.4

--1.4

V

Forward Transfer Admittance

⏐yfs⏐

VDS=--10V, ID=--50mA

80

110

mS

RDS(on)1

ID=--50mA, VGS=--4V

8

10.4

Ω

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=--30mA, VGS=--2.5V

11

15.4

Ω

RDS(on)3

ID=--1mA, VGS=--1.5V

27

54

Ω

Marking : XA

Continued on next page.

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Ordering number : EN6645B

32509 MS IM TC-00001903 / 72606 / 33006PE MS IM TB-00002203 / 90100 TS IM TA-1982

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

device, the customer should always evaluate and test devices mounted in the customer

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

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customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

SANYO Semiconductors

DATA SHEET

3LP01C

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

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