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ECH8656 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ECH8656 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() ECH8656 No.9010-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=4A 7 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=4A, VGS=4.5V 9 13 17 mΩ RDS(on)2 ID=4A, VGS=4.0V 9.4 13.5 18 mΩ RDS(on)3 ID=4A, VGS=3.1V 11 16 22 mΩ RDS(on)4 ID=2A, VGS=2.5V 12.5 18 26 mΩ RDS(on)5 ID=0.5A, VGS=1.8V 17 30 48 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 1060 pF Output Capacitance Coss VDS=10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 135 pF Turn-ON Delay Time td(on) See specified Test Circuit. 17.5 ns Rise Time tr See specified Test Circuit. 120 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 68 ns Fall Time tf See specified Test Circuit. 80 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=7.5A 10.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=7.5A 2.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=7.5A 2.9 nC Diode Forward Voltage VSD IS=7.5A, VGS=0V 0.74 1.2 V Switching Time Test Circuit PW=10μs D.C.≤1% P.G 50Ω G S D ID=4A RL=2.5Ω VDD=10V VOUT VIN 4V 0V VIN ECH8656 Drain-to-Source Voltage, VDS -- V ID -- VDS Gate-to-Source Voltage, VGS -- V ID -- VGS 0 IT12484 0 0.5 1.0 1.5 2.0 2.5 1 4 7 2 5 8 3 6 9 10 VDS=10V 0 1.5 3.5 5.5 2.0 4.0 6.0 6.5 7.0 0.5 2.5 4.5 1.0 3.0 5.0 7.5 0 IT16586 0.1 0.2 0.3 0.4 0.5 VGS=1.5V 1.8V |
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