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ECH8656 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ECH8656
Description  General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8656 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ECH8656
No.9010-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.5
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=4A
7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=4A, VGS=4.5V
9
13
17
mΩ
RDS(on)2
ID=4A, VGS=4.0V
9.4
13.5
18
mΩ
RDS(on)3
ID=4A, VGS=3.1V
11
16
22
mΩ
RDS(on)4
ID=2A, VGS=2.5V
12.5
18
26
mΩ
RDS(on)5
ID=0.5A, VGS=1.8V
17
30
48
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
1060
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
180
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
135
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
17.5
ns
Rise Time
tr
See specified Test Circuit.
120
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
68
ns
Fall Time
tf
See specified Test Circuit.
80
ns
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=7.5A
10.8
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4.5V, ID=7.5A
2.1
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4.5V, ID=7.5A
2.9
nC
Diode Forward Voltage
VSD
IS=7.5A, VGS=0V
0.74
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=4A
RL=2.5Ω
VDD=10V
VOUT
VIN
4V
0V
VIN
ECH8656
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Gate-to-Source Voltage, VGS -- V
ID -- VGS
0
IT12484
0
0.5
1.0
1.5
2.0
2.5
1
4
7
2
5
8
3
6
9
10
VDS=10V
0
1.5
3.5
5.5
2.0
4.0
6.0
6.5
7.0
0.5
2.5
4.5
1.0
3.0
5.0
7.5
0
IT16586
0.1
0.2
0.3
0.4
0.5
VGS=1.5V
1.8V



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