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2SC3690 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3690 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3690 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB B Base Current-Continuous 1.5 A Collector Power Dissipation @ TC=25℃ 15 PC Collector Power Dissipation @ Ta=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn |
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