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2SC3693 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SC3693
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3693 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC3693 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC3693 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC3693 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC3693
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=6A; IB=0.6A,L=1mH
60
V
VCEsat-1
Collector-emitter saturation voltage
IC=6A; IB=0.3A
0.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A; IB=0.4A
0.5
V
VBEsat-1
Base-emitter saturation voltage
IC=6A; IB=0.3A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=8A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=60V; IE=0
10
μA
ICEX
Collector cut-off current
VCE=60V; VBE=-1.5V
Ta=125℃
10
1.0
μA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=2V
100
hFE-2
DC current gain
IC=2A ; VCE=2V
100
200
400
hFE-3
DC current gain
IC=6A ; VCE=2V
60
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
150
pF
fT
Transition frequency
IC=1.0A ; VCE=10V
140
MHz
Switching times
ton
Turn-on time
0.3
μs
ts
Storage time
1.5
μs
tf
Fall time
IC=6A;RL=8.3Ω
IB1=-IB2=0.3A
VCC≈50V
0.3
μs
hFE-2 classifications
M
L
K
100-200
150-300
200-400



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