2SC3694 datasheet(2/3 Pages) ISC

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3694

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=8A; IB=0.8A;L=1mH

VCE(sat)1

Collector-emitter saturation voltage

IC=8A ; IB=0.4A

0.3

VCE(sat)2

Collector-emitter saturation voltage

IC=12A ; IB=0.6A

0.5

VBE(sat)1

Base-emitter saturation voltage

IC=8A ; IB=0.4A

1.2

VBE(sat)2

Base-emitter saturation voltage

IC=12A ; IB=0.6A

1.5

ICBO

Collector cut-off current

VCB=60V;IE=0

ICER

Collector cut-off current

VCB=60V;RBE=50Ω;Ta=125°C

1.0

ICEX1

Collector cut-off current

VCB=60V; VBE=-1.5V

ICEX2

Collector cut-off current

VCB=60V; VBE=-1.5V;Ta=125°C

1.0

IEBO

Emitter cut-off current

VEB=5V;IC=0

hFE-1

DC current gain

IC=1.5A ; VCE=2V

100

hFE-2

DC current gain

IC=3.0A ; VCE=2V

100

400

hFE-3

DC current gain

IC=8.0A ; VCE=2V

Cob

Collector capacitance

VCB=10V;IE=0;f=1.0MHz

180

Transition frequency

IC=1.5A ; VCE=10V

120

MHz

Switching times

ton

Turn-on time

0.3

Storage time

1.5

Fall time

IC=8.0A; IB1=-IB2=0.4A

VCC=50V ,RL=6.3Ω

0.3

hFE-2 Classifications

100-120

150-300

200-400

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