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2SD916 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD916 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD916 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA; IB= 0 B 60 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 7.5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 7.5mA B 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 50 mA hFE DC Current Gain IC= 3A; VCE= 1.5V 800 4000 isc Website:www.iscsemi.cn 2 |
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