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2SD1276 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD1276
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1276 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1276 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1276 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SD1276 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SD1276 2SD1276A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SD1276
60
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1276A
IC=30mA , IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=3A ;IB=12mA
2
V
VCEsat-
Collector-emitter saturation voltage
IC=5A ;IB=20mA
4
V
VBE
Base-emitter voltage
VCE=3V; IC=3A
2.5
V
2SD1276
VCB=60V ;IE=0
ICBO
Collector
cut-off current
2SD1276A
VCB=80V; IE=0
0.2
mA
2SD1276
VCE=30V; IB=0
ICEO
Collector
cut-off current
2SD1276A
VCE=40V; IB=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2
mA
hFE-1
DC current gain
IC=3A ; VCE=0.5V
1000
hFE-2
DC current gain
IC=3A ; VCE=3V
2000
10000
fT
Transition frequency
IC=0.5A; VCE=10V;f=1MHz
20
MHz
Switching times
ton
Turn-on time
0.5
μs
ts
Storage time
4
μs
tf
Fall time
IC=2A ;IB1=8mA
IB2=-8mA;VCC=50V
1
μs
hFE-2 Classifications
Q
R
2000-5000
4000-10000



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