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2SD1846 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1846 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1846 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V VCB=750V; IE=0 10 μA ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 5 25 hFE-2 DC current gain IC=3A ; VCE=10V 4 fT Transition frequency IC=0.5A ; VCE=10V;f=0.5MHz 2 MHz VF Diode forward voltage IC=3.5A 2.0 V Switching times resistive load ts Storage time 1.5 μs tf Fall time IC=3A; IB1=0.8A; IB2=-1.6A VCC=200V 0.2 μs |
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