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2SD2060 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2060 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2060 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 0.45 1.5 V VBE Base-emitter on voltage IC=3A;VCE=5V 1.0 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 30 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 240 hFE-2 DC current gain IC=3A ; VCE=5V 15 50 fT Transition frequency IC=0.5A ; VCE=5V 8.0 MHz COB Collector output capacitance f=1MHz;VCB=10V 90 pF hFE-1 Classifications R O Y 40-80 70-140 120-240 |
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