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3DD201 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DD201 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD201 DESCRIPTION ・With TO-3 package ・High collector-base breakdown voltage : VCBO=350V APPLICATIONS ・For TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A PC Collector power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT Rθjc Thermal resistance junction to case 1.5 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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