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BD302 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD302
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD302 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BD302 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD302 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD302
isc Website：www.iscsemi.cn
DESCRIPTION
·DC Current Gain -
: hFE = 30(Min.)@ IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min.)
·Complement to Type BD301
APPLICATIONS
·Designed for audio output stages up to 25W, vertical
deflection circuits in color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
B
Base Current-Continuous
-2
A
PC
Collector Power Dissipation
@ TC=25℃
55
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.3
℃/W


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