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BD539A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD539A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD539A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 0.25 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A B 0.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.25 V ICEO Collector Cutoff Current VCB= 30V; IB= 0 B 0.3 mA ICES Collector Cutoff Current VCE= 60V; VBE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A; VCE= 4V 30 hFE-3 DC Current Gain IC= 3A; VCE= 4V 12 isc Website:www.iscsemi.cn 2 |
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