BD545 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD545/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD545

BD545A

BD545B

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BD545C

IC= 30mA ;IB=0

100

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.625A

0.8

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 2A

1.0

VBE(on)

Base-Emitter On Voltage

IC= 10A; VCE= 4V

1.8

BD545

VCE= 40V; VBE= 0

BD545A

VCE= 60V; VBE= 0

BD545B

VCE= 80V; VBE= 0

ICES

Collector

Cutoff Current

BD545C

VCE= 100V; VBE= 0

0.4

BD545/A

VCE= 30V; IB= 0

ICEO

Collector

Cutoff Current

BD545B/C

VCE= 60V; IB= 0

0.7

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

hFE-1

DC Current Gain

IC= 1A; VCE= 4V

hFE-2

DC Current Gain

IC= 5A; VCE= 4V

hFE-3

DC Current Gain

IC= 10A; VCE= 4V

Switching times

ton

Turn-on Time

0.6

μs

toff

Turn-off Time

IC= 6A; IB1= -IB2= 0.6A;

RL= 5Ω; VBE(off)= -4V

1.0

μs

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