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BD643 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD643 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors BD643 DESCRIPTION ・With TO-220C package ・Complement to type BD644 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 45 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 8 A ICM Collector current-Pulse 12 A IB Base current 150 A PC Collector power dissipation TC=25℃ 62.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.5 ℃/W |
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