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BD810 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD810 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BD810 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -1.1 V VBE Base-emitter voltage IC=-4A ; VCE=-2V -1.6 V ICBO Collector cut-off current VCB=-80V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-2A ; VCE=-2V 30 hFE-2 DC current gain IC=-4A ; VCE=-2V 15 fT Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz 1.5 MHz |
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