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21N65M5 Datasheet(PDF) 1 Page - STMicroelectronics

Part # 21N65M5
Description  N-channel 650 V, 0.175 Ω, 17 A PowerFLAT??(8x8) HV ultra low gate charge MDmesh™V Power MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

21N65M5 Datasheet(HTML) 1 Page - STMicroelectronics

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May 2011
Doc ID 17438 Rev 4
1/14
14
STL21N65M5
N-channel 650 V, 0.175
Ω, 17 A PowerFLAT™ (8x8) HV
ultra low gate charge MDmesh™ V Power MOSFET
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
The device is a N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1.
Internal schematic diagram
Type
VDSS @
TJmax
RDS(on)
max
ID
STL21N65M5
710 V
< 0.190
Ω
17 A (1)
1.
The value is rated according to Rthj-case
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL21N65M5
21N65M5
PowerFLAT™ (8x8) HV
Tape and reel
www.st.com


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