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BU705D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU705D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU705D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Integrated Efficiency Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.5 A ICM Collector Current-Peak tp<2ms 4 A IB B Base Current- Continuous 2 A IBM Base Current-Peak tp<2ms 4 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.cn |
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