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BU2722AF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU2722AF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2722AF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 825 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 10 A ICM Collector current-peak 25 A IB Base current (DC) 10 A IBM Base current-peak 14 A PT Total power dissipation TC=25℃ 45 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ |
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