BUS48AP datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUS48AP

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

450

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 8A; IB= 1.6A

IC= 8A; IB= 1.6A;T

C= 100℃

1.5

2.0

VCE (sat)-2

Collector-Emitter Saturation Voltage

IC= 12A; IB= 2.4A

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 8A; IB= 1.6A

IC= 8A; IB= 1.6A;T

C= 100℃

1.6

ICER

Collector Cutoff Current

VCE=rated VCER; RBE= 10Ω

VCE=rated VCER; RBE= 10Ω;TC=125℃

0.5

3.0

ICEV

Collector Cutoff Current

VCE=rated VCES; VBE(off)= 1.5V

VCE=rated VCES; VBE(off)= 1.5V;TC=125℃

0.2

2.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

0.1

hFE

DC Current Gain

IC= 8A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V, ftest= 1MHz

350

Switching times Resistive Load

Delay Time

0.2

μs

Rise Time

0.7

μs

Storage Time

2.0

μs

Fall Time

IC= 10A; IB1= 2A; VCC= 250V;

VBE(off)= 5V, Duty Cycle≤2%

0.4

μs

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