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BUV23 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV23 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV23 DESCRIPTION ・ ・With TO-3 package ・High DC current gain ・Very fast switching times ・Low collector saturation voltage APPLICATIONS ・Designed for high current,high speed and high power application. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 325 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A ICM Collector current-peak 40 A IB Base current 6 A PT Total power dissipation TC=25℃ 250 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 0.7 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Similar Part No. - BUV23 |
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Similar Description - BUV23 |
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