TIP145T datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

TIP145T

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -30mA, IB= 0

-60

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -5A ,IB= -10mA

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -10A ,IB= -40mA

-3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -10A ,IB= -40mA

-3.5

V BE(on)

Base-Emitter On Voltage

IC= -10A ; VCE= -4V

-3.0

ICBO

Collector Cutoff current

VCB= -60V, IE= 0

-1

ICEO

Collector Cutoff current

VCE= -30V, IB= 0

-2

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2

hFE-1

DC Current Gain

IC= -5A ; VCE= -4V

1000

hFE-2

DC Current Gain

IC= -10A ; VCE= -4V

500

Switching Times

Delay Time

0.15

μs

Rise Time

0.55

μs

tstg

Storage Time

2.5

μs

Fall Time

VCC= -30 V, IC= - 5.0 A,

IB1= -IB2 = -20 mA;

tp= 20μs

Duty Cycle≤20%

2.5

μs

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