SIR166DP datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 65471

S10-0039-Rev. A, 11-Jan-10

www.vishay.com

Vishay Siliconix

SiR166DP

New Product

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 3 V

VDS - Drain-to-Source Voltage (V)

0.0020

0.0026

0.0032

0.0038

0.0044

0.0050

014

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

11223344

VDS =20 V

VDS =15 V

ID =10A

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

900

1800

2700

3600

4500

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

VGS =4.5 V

ID =15A

VGS =10 V

TJ -Junction Temperature (°C)

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