V10150C, VF10150C, VB10150C & VI10150C

Vishay General Semiconductor

Document Number: 89068

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

www.vishay.com

1

New Product

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 5.0 A

150 V

60 A

0.69 V

150 °C

TO-220AB

V10150C

1

2

3

PIN 1

PIN 2

CASE

PIN 3

PIN 1

PIN 2

PIN 3

TMBS

®

VI10150C

TO-262AA

PIN 1

PIN 2

PIN 3

K

VB10150C

PIN 1

PIN 2

K

HEATSINK

1

2

K

TO-263AB

1

K

2

3

VF10150C

ITO-220AB

1

2

3

PARAMETER

SYMBOL

V10150C

VF10150C

VB10150C

VI10150C

UNIT

Maximum repetitive peak reverse voltage

150

V

Maximum average forward rectified current (fig. 1)

per device

per diode

10

5.0

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

60

A

Non-repetitive avalanche energy

23

mJ

0.5

A

dV/dt

10 000

V/µs

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

1500

V

Operating junction and storage temperature range

- 55 to + 150

°C