SMG2334NE datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMG2334NE

3.5A , 30V , RDS(ON) 58 m

N-Channel Enhancement MOSFET

10-Jan-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

Gate-Body Leakage

IGSS

±10

VDS =0, VGS= ±12V

VDS =16V, VGS=0

Zero Gate Voltage Drain Current

IDSS

μA

VDS =16V, VGS=0, TJ=55°C

On-State Drain Current

ID(ON)

VDS =5V, VGS=4.5V

VGS=4.5V, ID =2.8A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS=2.5V, ID =2.4A

Forward Transconductance

gFS

VDS=10V,,ID =2.8A

Diode Forward Voltage

VSD

0.69

IS=1A, VGS=0

Dynamic

Input Capacitance

Ciss

413

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=15 V,

VGS=0,

f=1 MHz

Total Gate Charge

Gate-Source Charge

Qgs

0.9

Gate-Drain Charge

Qgd

1.9

ID=2.8A

VDS=10V

VGS=4.5V

Turn-On Delay Time

Td(ON)

Rise Time

Turn-Off Delay Time

Td(OFF)

Fall Time

ID=2.8A,

VDS=10V

VGEN=4.5V

RL=3.6Ω,

RGEN=6Ω

Notes

Pulse test：PW≦300 us duty cycle≦2%.

Guaranteed by design, not subject to production testing.

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