SSG4502CE datasheet(3/7 Pages) SECOS

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SSG4502CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ

Ω

P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

P-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Drain-Source Breakdown Voltage

V(BR)DSS

-30

VGS=0, ID=-250µA

Gate Threshold Voltage

VGS(th)

-1

VDS=VGS, ID=-250µA

Gate-Source Leakage Current

IGSS

±10

VGS=-20V, VDS=0

Drain-Source Leakage Current

IDSS

-1

µA

VDS=-24V, VGS=0

On-State Drain Current

ID(ON)

-50

VDS=-5V, VGS=-10V

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-8.5A

VGS=-4.5V, ID=-6.8A

Forward Transconductance

gfs

VDS=-15V, ID=-9.5A

Pulsed Source Current (Body Diode)

ISM

Dynamic

Total Gate Charge

ID=-10A

VDS=-15V

VGS=-4.5V

Gate-Source Charge

Qgs

5.8

Gate-Drain (“Miller”) Change

Qgd

Turn-on Delay Time

Td(on)

VDD=-15V

VGS=-10V

ID=-1A

RGEN=15

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.

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