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SSPS7331P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSPS7331P
Description  -13.4 A , -30 V , RDS(ON) 13 m P-Ch Enhancement Mode Power MOSFET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSPS7331P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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SSPS7331P
-13.4 A , -30 V , RDS(ON) 13 mΩ
Ω
Ω
Ω
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
19-Jul-2011 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
B
E
F
G
g
A
e
b
θ
D
C
d
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation. Typical applications are
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
DFN3x3-8PP
3K
13 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
1
TA = 25°C
ID
-13.4
A
TA = 70°C
-11
A
Pulsed Drain Current
2
IDM
-50
A
Continuous Source Current (Diode Conduction)
1
IS
-2.1
A
Total Power Dissipation
1
TA = 25°C
PD
3.5
W
TA = 70°C
2.0
W
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.)
1 t ≦ 10 sec
RθJA
35
°C / W
Steady State
81
°C / W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
DFN3x3-8PP
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
0.70
0.90
θ
0
°
12
°
B
3.00BSC
b
0.20
0.40
C
0.10
0.25
d
0.65BSC
D
1.80
2.3
e
3.00BSC
E
3.2BSC
g
0.70(TYP.)
F
0.01
0.02
G
2.35BSC
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