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STT4443 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT4443
Description  -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT4443 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changes of specification will not be informed individually.
Elektronische Bauelemente
STT4443
-2.3A , -30V , RDS(ON) 120 m
P-Channel Enhancement Mode MOSFET
02-Dec-2011 Rev. B
Page 1 of 4
4443

TOP VIEW
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
STT4443 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The TSOP-6
package is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Smaller Outline Package
Surface mount package
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
TSOP-6
3K
7 inch
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
-2.3
Continuous Drain Current
3
TA=70°C
ID
-1.8
A
Pulsed Drain Current
1
IDM
-10
A
Power Dissipation
TA=25°C
PD
1.14
W
Linear Derating Factor
0.01
W / °C
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~150
°C
Thermal Resistance Rating
Maximum Junction to Ambient
3
RJA
110
°C / W
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
0
0.10
B
2.60
3.00
H
0.60 REF.
C
1.40
1.80
J
0.12 REF.
D1.10 MAX.
K
0°
10°
E
1.90 REF.
L
0.95 REF.
F
0.30
0.50
TSOP-6
B
L
F
H
C
J
D G
K
A
E
1
23
4
5
6
Date Code


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