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BAV102 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # BAV102
Description  Small Signal Switching Diodes, High Voltage
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAV102 Datasheet(HTML) 2 Page - Vishay Siliconix

  BAV102 Datasheet HTML 1Page - Vishay Siliconix BAV102 Datasheet HTML 2Page - Vishay Siliconix BAV102 Datasheet HTML 3Page - Vishay Siliconix BAV102 Datasheet HTML 4Page - Vishay Siliconix  
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BAV100, BAV101, BAV102, BAV103
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 31-Jul-12
2
Document Number: 85542
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Thermal resistance junction to lead
RthJL
350
K/W
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
ELECTRICAL
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 50 V
BAV100
IR
100
nA
VR = 100 V
BAV101
IR
100
nA
VR = 150 V
BAV102
IR
100
nA
VR = 200 V
BAV103
IR
100
nA
Tj = 100 °C, VR = 50 V
BAV100
IR
15
μA
Tj = 100 °C, VR = 100 V
BAV101
IR
15
μA
Tj = 100 °C, VR = 150 V
BAV102
IR
15
μA
Tj = 100 °C, VR = 200 V
BAV103
IR
15
μA
Breakdown voltage
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
BAV100
V(BR)
60
V
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
BAV101
V(BR)
120
V
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
BAV102
V(BR)
200
V
BAV103
V(BR)
250
V
Diode capacitance
VR = 0 V, f = 1 MHz,
VHF = 50 mV
CD
1.5
pF
Differential forward current
IF = 10 mA
rf
5
Reverse recovery time
IF = IR = 30 mA,
iR = 3 mA, RL = 100 
trr
50
ns
0
40
80
120
160
0.01
0.1
1
10
1000
Tj -Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R = VRRM
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF -Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j = 25 °C



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