BSM181R datasheet(2/7 Pages) SIEMENS

2 / 7 page

Semiconductor Group

BSM 181

BSM 181 R

Electrical Characteristics

j = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

GS = 0, ID = 0.25 mA

(BR)DSS

800

–

Gate threshold voltage

DS = VGS, ID = 1 mA

GS(th)

2.1

3.0

4.0

Zero gate voltage drain current

DS = 800 V, VGS = 0

j = 25 ˚C

j = 125 ˚C

DSS

–

300

250

1000

µA

Gate-source leakage current

GS = 20 V, VDS = 0

GSS

–

100

Drain-source on-state resistance

GS = 10 V, ID = 23 A

DS(on)

–

0.18

0.24

Ω

Dynamic Characteristics

Forward transconductance

DS ≥ 2 × ID × RDS(on)max., ID = 23 A

–

Input capacitance

GS = 0, VDS = 25 V, f = 1 MHz

iiss

–24

Output capacitance

GS = 0, VDS = 25 V,

f = 1 MHz

oss

–

1.3

2.0

Reverse transfer capacitance

GS = 0, VDS = 25 V, f = 1 MHz

rss

–

0.5

0.8

Turn-on time

on (ton = td (on) + tr)

CC = 400 V, VGS = 10 V

D = 23 A, RGS = 3.3 Ω

d (on)

–60

–

–30

–

Turn-off time

off (toff = td (off) + tf)

CC = 400 V, VGS = 10 V

D = 23 A, RGS = 3.3 Ω

d (off)

–

370

–

–70

–

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