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BU406 Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd

Part # BU406
Description  NPN Epitaxial Silicon Transistor
PDF  1 Pages
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Manufacturer  TGS [Tiger Electronic Co.,Ltd]
Direct Link  http://www.tgselec.com
Logo TGS - Tiger Electronic Co.,Ltd

BU406 Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd

  BU406 Datasheet HTML 1Page - Tiger Electronic Co.,Ltd  
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Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
200
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
7.0
A
Base Current
I
B
4.0
A
Total Dissipation at
P
tot
60
W
Max. Operating Junction Temperature
T
j
150
oC
Storage Temperature
T
stg
-55~150
oC
BU406
High Voltage Switching
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICES
V
CE=400V, IE=0
5.0
mA
V
CE=250V, IE=0
0.1
Emitter Cut-off Current
IEBO
V
EB=6V, IC=0
1.0
mA
Collector-Emitter Sustaining Voltage
VCEO
I
C=50mA, IB=0
200
V
DC Current Gain
hFE(1)
V
CE=4V, IC=1.0A
10
Collector-Emitter Saturation Voltage
VCE(sat) I
C=5.0A,IB=0.5A
1.0
V
Base-Emitter Saturation Voltage
VBE(sat) I
C=5.0A,IB=0.5A
1.2
V
Current Gain Bandwidth Product
f
T
V
CE=10V, IC=0.5A
10
MHz
Turn Off Time
t
OFF
I
C=5A, IB=0.5A
0.75
us
NPN Epitaxial Silicon Transistor
Product specification
* Use In Horizontal Deflection Output Stage
Electrical Characteristics ( Ta = 25
)
Absolute Maximum Ratings ( Ta = 25
)
TO-220
TIGER ELECTRONIC CO.,LTD


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