VT1060C datasheet(2/5 Pages) VISHAY

2 / 5 page

New Product

VT1060C, VFT1060C, VBT1060C & VIT1060C

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89131

Revision: 08-Sep-09

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

IR = 1.0 mA

TA = 25 °C

VBR

60 (minimum)

Instantaneous forward voltage per diode (1)

IF = 2.5 A

IF = 5.0 A

TA = 25 °C

0.49

0.58

0.70

IF = 2.5 A

IF = 5.0 A

TA = 125 °C

0.39

0.50

0.60

Reverse current per diode (2)

VR = 60 V

TA = 25 °C

TA = 125 °C

6.9

700

µA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT1060C

VFT1060C

VBT1060C

VIT1060C

UNIT

Typical thermal resistance

per diode

per device

RθJC

3.5

2.5

6.5

5.0

3.5

2.5

3.5

2.5

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

VT1060C-E3/4W

1.87

50/tube

Tube

ITO-220AB

VFT1060C-E3/4W

1.75

50/tube

Tube

TO-263AB

VBT1060C-E3/4W

1.39

50/tube

Tube

TO-263AB

VBT1060C-E3/8W

1.39

800/reel

Tape and reel

TO-262AA

VIT1060C-E3/4W

1.45

50/tube

Tube

Figure 1. Maximum Forward Current Derating Curve

Case Temperature (°C)

100

125

VFT1060C

Mounted on Specific Heatsink

150

V(B,I)T1060C

Figure 2. Forward Power Dissipation Characteristics Per Diode

1.0

2.0

3.0

4.0

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

1.5

2.5

3.5

D = t

p/T

D = 1.0

0.5

VT1060C Datasheet(PDF) 2 Page - Vishay Siliconix

VT1060C Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

Datasheet Download

Link URL