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VT3080C Datasheet(PDF) 3 Page - Vishay Siliconix |
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VT3080C Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() Document Number: 89168 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Sep-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3 VT3080C, VFT3080C, VBT3080C, VIT3080C Vishay General Semiconductor New Product Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device T A = 150 °C T A = 125 °C T A = 25 °C Instantaneous Forward Voltage (V) 100 0.1 0 0.6 1.2 0.2 0.8 1 0.4 1.0 T A = 100 °C 10 Percent of Rated Peak Reverse Voltage (%) 100 0.001 20 40 100 50 1 30 60 10 90 70 0.1 0.01 80 T A = 150 °C T A = 125 °C T A = 25 °C T A = 100 °C Reverse Voltage (V) 10 000 10 0.1 100 1 100 10 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 1000 t - Pulse Duration (s) 10 0.1 0.01 10 100 0.1 1 V(B,I)T3080C VFT3080C Junction to Case 1 |
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