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SBP1710-R Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # SBP1710-R
Description  High Voltage Fast-Switching NPN Power Transistor
PDF  6 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

SBP1710-R Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  SBP1710-R Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP1710-R Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP1710-R Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP1710-R Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP1710-R Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd SBP1710-R Datasheet HTML 6Page - Shenzhen Winsemi Microelectronics Co., Ltd  
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SBP1710-R
SBP1710-R
SBP1710-R
SBP1710-R
2/6
Steady,
Steady,
Steady,
Steady, all
all
all
all for
for
for
for your
your
your
your advance
advance
advance
advance
Electrical Characteristics (T
C
=25unless otherwise noted)
Symbol
Parameter
Test conditions
Value
Units
Min
Typ
Max
ICBO
Collector Cut-off Current
VCB=500V, Ie=0A
-
-
10
µA
IEBO
Emitter Cut-off Current
VEB=5V, Ic=0A
-
-
10
µA
BVCBO
Collector-Base Breakdown Voltage
Ic=1mA,Ie=0
900
-
-
V
BVCEO
Collector-Emitter Breakdown Voltage
Ic=5mA,Ib=open
500
-
-
V
BVEBO
Emitter-Base Breakdown Voltage
Ie=1mA,Ic=0
7
-
-
V
VCE(sat)
Collector -Emitter Saturation Voltage
Ic=3A,Ib=0.6A
-
-
1
V
VBE(sat)
Base -Emitter saturation Voltage
Ic=3A,Ib=0.6A
-
-
1.5
V
IEBO
Emitter -Base Cutoff Current
Veb=5V,Ic=0
-
-
10
µA
hFE
DC Current Gain
Vce=5V,Ic=0.6A
20
-
50
Vce=5V,Ic=3A
8
-
-
fT
Gain-Bandwidth Product
Vce=10V,Ic=0.6A
-
-
18
MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
-
-
80
pF
ton
Turn on Time
VCC=5V,IC=0.5A
-
-
0.6
µs
ts
Storage Time
VCC=5V,IC=0.5A
3
-
8
µs
tf
Fall Time
VCC=5V,IC=0.5A
-
-
0.4
µs
Note:
Pulse Test: Pulse width≤300
µs,Duty cycle 10%



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