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SBW3320 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SBW3320 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 7 page  2 /7 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance SBW3320 SBW3320 SBW3320 SBW3320 Electrical Characteristics (T C=25℃ unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=6.0A,Ib=1.2A - - 1.0 V Ic=8.0A,Ib=1.6A Tc=100℃ - - 2.0 V VBE(sat) Base-Emitter Saturation Voltage Ic=6.0A,Ib=1.2A - - 1.2 V Ic=8.0A,Ib=1.6A Tc=100℃ - - 1.5 V IEBO Emitter-Base Cutoff Current Veb=7V,Ic=0V - - 1 mA IcBO Collector-Base Cutoff Current Vcb=500V,Ic=0V - - 1 mA hFE DC Current Gain Vce=5V, Ic=5.0A Vce=5V, Ic=8.0A 10 6 - - 40 30 ts Storage Time VCC=5.0V , Ic=0.5A (UI9600) 4 - - 6 0.8 ㎲ tf Fall Time fT Current Gain Band with Prouct Vce=10V, Ic=0.5A 4 MHz Note: Note: Note: Note: Pulse Test : Pulse width 300, Duty cycle 2% |
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