WFF2N60B datasheet(2/7 Pages) WINSEMI

2 / 7 page

Steady,

Steady, keep

keep

keep you

you

you advance

advance

WFF

F2N60

2N60

2N60B

2/7

Electrical Characteristics(Tc=25℃)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Gate leakage current

IGSS

VGS=±30V,VDS=0V

±100

Gate-source breakdown voltage

V(BR)GSS

IG=±10 µA,VDS=0V

±30

Drain cut -off current

IDSS

VDS=600V,VGS=0V

µA

VDS=480V,Tc=125℃

100

µA

Drain -source breakdown voltage

V(BR)DSS

ID=250 µA,VGS=0V

600

Gate threshold voltage

VGS(th)

VDS=10V,ID=250 µA

Drain -source ON resistance

RDS(ON)

VGS=10V,ID=1A

4.5

5.0

Ω

Forward Transconductance

gfs

VDS=50V,ID=1A

2.25

Input capacitance

Ciss

VDS=25V,

VGS=0V,

f=1MHz

280

330

Reverse transfer capacitance

Crss

Output capacitance

Coss

Switching time

Rise time

VDD=300V,

ID=2A，

RG=25Ω，

(Note4,5)

Turn-on time

ton

Fall time

Turn-off

time

toff

Total gate charge(gate-source

plus gate-drain)

VDD=320V,

VGS=10V,

ID=2A

(Note4,5)

9.0

Gate-source charge

Qgs

1.7

Gate-drain("miller") Charge

Qgd

4.5

Source-Drain Ratings and Characteristics(Ta=25℃)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Continuous drain reverse current

IDR

2.0

Pulse drain reverse current

IDRP

8.0

Forward voltage(diode)

VDSF

IDR=2.0A,VGS=0V

1.4

Reverse recovery time

trr

IDR=2.A,VGS=0V,

dIDR / dt =100 A / µs

180

Reverse recovery charge

Qrr

0.72

µC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=18.5mH IAS=2A,VDD=50V,RG=0Ω ,Starting TJ=25℃

3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃

4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%

5. Essentially independent of operating temperature.

This transistor is an electrostatic sensitive device

Please handle with caution

WFF2N60B Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

WFF2N60B Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL