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WFD830B Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFD830B Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. W W W WF F F FD830B D830B D830B D830B Rev.A Feb.2011 Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Features � 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V � Ultra-low Gate charge(Typical 18nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 500 V ID Continuous Drain Current(@Tc=25℃) 5 A Continuous Drain Current(@Tc=100℃) 2.9 A IDM Drain Current Pulsed (Note1) 20 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 300 mJ EAR Repetitive Avalanche Energy (Note1) 7.3 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 61 W Derating Factor above 25℃ 0.49 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 2.05 ℃/W RQCS Thermal Resistance , Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W |
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