WFF640 datasheet(2/7 Pages) WINSEMI

2 / 7 page

WFF640

2/7

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Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Gate leakage current

GSS

VGS = ±30 V, VDS = 0 V

±100

Gate−source breakdown voltage

(BR)GSS

IG = ±10 μA, VDS = 0 V

±30

Drain cut−off current

DSS

VDS = 200 V, VGS = 0 V

μA

Drain−source breakdown voltage

(BR)DSS

ID = 250 μA, VGS = 0 V

200

Gate threshold voltage

GS(th)

VDS = 10 V, ID =250 μA

Drain−source ON resistance

DS(ON)

VGS = 10 V, ID = 9A

0.18

Ω

Forward Transconductance

gfs

VDS = 50 V, ID =9A

6.7

Input capacitance

iss

VDS = 25 V,

VGS = 0 V,

f = 1 MHz

1300

1760

Reverse transfer capacitance

rss

Output capacitance

oss

245

Switching time

Rise time

VDD =100 V,

ID = 18 A

RG=25 Ω

(Note4,5)

Turn−on time

ton

104

Fall time

327

Turn−off time

toff

108

Total gate charge (gate−source

plus gate−drain)

VDD = 160 V,

VGS = 10 V,

ID = 18A

(Note4,5)

Gate−source charge

Qgs

Gate−drain (“miller”) Charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Continuous drain reverse current

Pulse drain reverse current

DRP

Forward voltage (diode)

DSF

IDR = 18 A, VGS = 0 V

1.4

1.5

Reverse recovery time

trr

IDR = 18A, VGS = 0 V,

dIDR / dt = 100 A / μs

195

Reverse recovery charge

Qrr

1.48

μC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=18.5mH,I

AS=18A,VDD=50V,RG=0Ω,Starting TJ=25℃

3.I

SD≤18A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃

4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%

5.Essentially independent of operating temperature.

This transistor is an electrostatic sensitive device

Please handle with caution

WFF640 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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