RJF0604JPD

Target Specifications

R07DS0583EJ0100 Rev.1.00

Page 2 of 3

Nov 22, 2011

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

3.5

—

—

V

Input voltage

—

—

1.2

V

—

—

100

A

—

—

50

A

Input current

(Gate non shut down)

—

—

1

A

—

0.8

—

mA

Input current

(Gate shut down)

—

0.35

—

mA

Shut down temperature

Tsd

—

175

—

C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

(5)

—

—

A

Note 4

Note;

4. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

—

—

(17)

A

Note 5

—

—

(10)

mA

Drain current

(5)

—

—

A

Note 5

Drain to source breakdown

voltage

60

—

—

V

16

—

—

V

Gate to source breakdown

voltage

–2.5

—

—

V

—

—

100

A

—

—

50

A

—

—

1

A

Gate to source leak current

—

—

–100

A

—

0.8

—

mA

Input current (shut down)

—

0.35

—

mA

—

—

10

A

Zero gate voltage drain current

—

—

(10)

A

Gate to source cutoff voltage

(1.2)

—

(2.4)

V

Forward transfer admittance

(4)

(7.6)

—

S

Note 5

—

(76)

100

m



Note 5

Static drain to source on state

resistance

—

(51)

(75)

m



Note 5

Output capacitance

Coss

—

(280)

—

pF

Turn-on delay time

—

(4.1)

—

s

Rise time

—

(16)

—

s

Turn-off delay time

—

(2.5)

—

s

Fall time

—

(3.1)

—

s

Body-drain diode forward

voltage

—

(0.84)

—

V

Body-drain diode reverse

recovery time

—

(100)

—

ns

—

(1.2)

—

ms

Over load shut down

operation time

Note 6

—

(0.7)

—

ms

Notes: 5. Pulse test

6. Including the junction temperature rise of the over loaded condition.