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RJK4002DPP-M0 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJK4002DPP-M0
Description  Silicon N Channel MOS FET High Speed Power Switching
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK4002DPP-M0 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0551EJ0100 Rev.1.00
Page 1 of 6
Oct 03, 2011
Preliminary Datasheet
RJK4002DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-state resistance
RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
2
3
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25
C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
400
V
Gate to source voltage
VGSS
30
V
Drain current
ID
Note4
3
A
Drain peak current
ID(pulse)
Note1
6
A
Body-drain diode reverse drain current
IDR
3
A
Body-drain diode reverse drain peak current
IDR(pulse)
Note1
6
A
Avalanche current
IAP
Note3
2.5
A
Avalanche energy
EAR
Note3
0.357
mJ
Channel dissipation
Pch
Note 2
20
W
Channel to case thermal Impedance
ch-c
6.25
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Notes: 1. PW
 10 ms, duty cycle  1 %
2. Value at Tc = 25
C
3. STch = 25
C, Tch  150C
4. Pulse width limited by safe operating area.
R07DS0551EJ0100
Rev.1.00
Oct 03, 2011


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