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2SA1069A-Z Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SA1069A-Z
Description  PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA1069A-Z Datasheet(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D14855EJ3V1DS
2
2SA1069, 1069A
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
−3.0 V, IB1 = −0.3 A, L = 1 mH
−60/−80
V
Collector to emitter voltage
VCEX(SUS)1
IC =
−3.0 A, IB1 = −IB2 = −0.3 A,
VBE(OFF) = 5.0 V, L = 180
μH, clamped
−60/−80
V
Collector to emitter voltage
VCEX(SUS)2
IC =
−6.0 A, IB1 = −0.6 A, IB2 = 0.3 A,
VBE(OFF) = 5.0 V, L = 180
μH, clamped
−60/−80
V
Collector cutoff current
ICBO
VCB =
−60/−80 V, IE = 0 A
−10
μA
Collector cutoff current
ICER
VCE =
−60/−80 V, RBE = 51 Ω, TA = 125 °C
−1.0
mA
Collector cutoff current
ICEX1
VCE =
−60/−80 V, VBE(OFF) = 1.5 V
−10
μA
Collector cutoff current
ICEX2
VCE =
−60/−80 V, VBE(OFF) = 1.5 V,
TA = 125
°C
−1.0
mA
Emitter cutoff current
IEBO
VEB =
−5.0 V, IC = 0 A
−10
μA
DC current gain
hFE1
VCE =
−5.0 V, IC = −0.3 ANote
40
DC current gain
hFE2
VCE =
−5.0 V, IC = −0.3 ANote
40
200
Collector saturation voltage
VCE(sat)
IC =
−3.0 A, IB = −0.3 ANote
−0.6
V
Base saturation voltage
VBE(sat)
IC =
−3.0 A, IB = −0.3 ANote
−1.5
V
Turn-on time
ton
0.5
μs
Storage time
tstg
2.5
μs
Fall time
tf
IC =
−3.0 A, RL = 17 Ω,
IB1 =
−IB2 = −0.3 A, VCC ≅ −50 V
Refer to the test circuit.
0.5
μs
Note
Pulse test PW
≤ 350
μs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform



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