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2SC3355 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC3355
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3355 Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10207EJ01V0DS
3
2SC2570A
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
Free Air
1 000
800
600
400
200
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
15
10
0.5
50
VCE = 10 V
VCE = 10 V
50
10
1
5
0.5
0.7
0.6
0.5
0.8
0.9
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 10 V
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
7
1
2
5
0.2
0.5
0.1
15 7 10
50
0.5
70
f = 1 MHz
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
INPUT CAPACITANCE vs. EMITTER TO BASE VOLTAGE
2
1
0.5
0.3
0.5
0.4
1
2
3
5
10
20 30
Cob
Cib



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