AM4934N datasheet(1/3 Pages) ANALOGPOWER

Part #	AM4934N

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	ANALOGPOWER [Analog Power]

Direct Link	http://www.analogpowerinc.com/index.html

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AM4934N

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4934_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

Dual N-Channel 30-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Maximum

Units

t <= 10 sec

62.5

oC/W

Steady-State

110

oC/W

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

RθJA

FET#

rDS(on) m( )

ID (A)

19 @ VGS = 4.5V

8.4

15 @ VGS = 10V

9.5

23 @ VGS = 4.5V

7.7

15 @ VGS = 10V

9.5

1

PRODUCT SUMMARY

2

Symbol

FET#1

Units

VDS

30

VGS

20

TA=25

oC

9.5

TA=70

oC

7.7

IDM

40

IS

4.5

A

TA=25

oC

2.1

TA=70

oC

1.3

TJ, Tstg

oC

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

-55 to 150

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

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