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1N50ZG-T92-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 1N50ZG-T92-R
Description  1.3A, 500V N-CHANNEL POWER MOSFET
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

1N50ZG-T92-R Datasheet(HTML) 3 Page - Unisonic Technologies

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1N50Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-726.b
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=400V, ID=1.5A
(Note 1, 2)
11
16
nC
Gate to Source Charge
QGS
1.6
nC
Gate to Drain Charge
QGD
5.5
nC
Turn-ON Delay Time
tD(ON)
VDD=250V, ID=1.5A, RG=25Ω
(Note 1, 2)
12
35
ns
Rise Time
tR
13
35
ns
Turn-OFF Delay Time
tD(OFF)
42
90
ns
Fall-Time
tF
15
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
1.3
A
Maximum Body-Diode Pulsed Current
ISM
5
A
Drain-Source Diode Forward Voltage
VSD
IS=1.3A, VGS=0V
1.15
V
Body Diode Reverse Recovery Time
trr
IS=1.5A, VGS=0V,
dIF/dt=100A/µs (Note 1)
162
ns
Body Diode Reverse Recovery Charge
QRR
0.54
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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