1N65G-AA3-R datasheet(2/6 Pages) UTC

2 / 6 page

1N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-579.B

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

1.2

Continuous Drain Current

1.2

Pulsed Drain Current (Note 2)

IDM

4.8

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

4.0

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

SOT-223

TO-251/ TO-252

TO-220

TO-220F

TO-92(TA=25℃)

TO-126

12.5

Junction Temperature

+150

℃

Operating Temperature

TOPR

-55 ~ +150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

θJA

150

℃

TO-251/ TO-252

110

TO-220/ TO-220F

62.5

TO-92

140

TO-126

132

Junction to Case

SOT-223

θJc

℃

TO-251/ TO-252

4.53

TO-220

3.13

TO-220F

5.95

TO-126

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